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RFP50N06
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
Unless Otherwise Speci?ed
60
50
40
30
20
10
0
0
25
50 75 100 125
150
175
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
0.5
0.2
T C , CASE TEMPERATURE ( o C)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.1
0.1
0.05
P DM
0.02
0.01
NOTES:
t 1
t 2
0.01 -5
10
SINGLE PULSE
10 -4
10 -3
10 -2
10 -1
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JC x R θ JC + T C
10 0 10 1
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
400
T J = MAX RATED
SINGLE PULSE
T C = 25 o C
10 3
FOR TEMPERATURES ABOVE 25 o C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
100
I = I 25 ? ------------------------ ?
100 μ s
V GS = 20V
? 175 – T C ?
? ?
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
V DSS(MAX) = 60V
1ms
10ms
100ms
DC
10 2
V GS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T C = 25 o C
1
1
10
100
40
10 -3
10 -2
10 -1
10 0
10 1
10 2
10 3
10 4
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
?2002 Fairchild Semiconductor Corporation
t, PULSE WIDTH (ms)
FIGURE 5. PEAK CURRENT CAPABILITY
RFP50N06 Rev. C0
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